Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices

Ma, Yuanzhi; Cullen, David A.; Goodwill, Jonathan M.; Xu, Qiyun; More, Karren L.; Skowronski, Marek

doi:10.1021/acsami.0c06960

Title: Exchange of Ions across the TiN/TaO_x Interface during Electroformation of TaO_x-Based Resistive Switching Devices

Journal Article · Fri May 22 00:00:00 EDT 2020 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.0c06960· OSTI ID:1708843

^[1];

^[2];

^[1]; Xu, Qiyun ^[1];

^[2];

^[1]

Carnegie Mellon Univ., Pittsburgh, PA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy elemental maps of Ta, O, N, and Ti in electroformed TiN/TaO_2.0/TiN structures. O, N, and Ti were exchanged between the anode and the functional oxide in devices formed at high power (~1 mW), but the exchange was below the detection limit at low power (<0.5 mW). All structures exhibit a similar Ta-enriched and O-depleted filament formed by the elemental segregation in the functional oxide by the temperature gradient. The elemental interchange is interpreted as due to Fick’s diffusion caused by high temperatures in the gap of the filament and is not an essential part of electroformation.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; DMR-1905648; MCF-677785

OSTI ID:: 1708843

Journal Information:: ACS Applied Materials and Interfaces, Vol. 12, Issue 24; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (52)

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo Nature Materials, Vol. 10, Issue 8, p. 625-630 https://doi.org/10.1038/nmat3070	journal	July 2011
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling Ielmini, Daniele Semiconductor Science and Technology, Vol. 31, Issue 6 https://doi.org/10.1088/0268-1242/31/6/063002	journal	May 2016
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks Ielmini, Daniele Microelectronic Engineering, Vol. 190 https://doi.org/10.1016/j.mee.2018.01.009	journal	April 2018
Nonvolatile Memory Materials for Neuromorphic Intelligent Machines Jeong, Doo Seok; Hwang, Cheol Seong Advanced Materials, Vol. 30, Issue 42 https://doi.org/10.1002/adma.201704729	journal	April 2018
Neuromorphic computing using non-volatile memory Burr, Geoffrey W.; Shelby, Robert M.; Sebastian, Abu Advances in Physics: X, Vol. 2, Issue 1 https://doi.org/10.1080/23746149.2016.1259585	journal	October 2016
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere Jeong, Doo Seok; Schroeder, Herbert; Breuer, Uwe Journal of Applied Physics, Vol. 104, Issue 12 https://doi.org/10.1063/1.3043879	journal	December 2008
Direct observation of conducting filaments on resistive switching of NiO thin films Son, J. Y.; Shin, Y. -H. Applied Physics Letters, Vol. 92, Issue 22 https://doi.org/10.1063/1.2931087	journal	June 2008
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices Russo, Ugo; Ielmini, Daniele; Cagli, Carlo IEEE Transactions on Electron Devices, Vol. 56, Issue 2 https://doi.org/10.1109/TED.2008.2010584	journal	February 2009
Thermochemical resistive switching: materials, mechanisms, and scaling projections Ielmini, Daniele; Bruchhaus, Rainer; Waser, Rainer Phase Transitions, Vol. 84, Issue 7 https://doi.org/10.1080/01411594.2011.561478	journal	July 2011
Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches Sharma, Abhishek A.; Noman, Mohammad; Abdelmoula, Mohamed Advanced Functional Materials, Vol. 24, Issue 35 https://doi.org/10.1002/adfm.201400461	journal	July 2014
Designing Negative Differential Resistance Devices Based on Self-Heating Gibson, Gary A. Advanced Functional Materials, Vol. 28, Issue 22 https://doi.org/10.1002/adfm.201704175	journal	April 2018
Electro-Thermal Model of Threshold Switching in TaO _x -Based Devices Goodwill, Jonathan M.; Sharma, Abhishek A.; Li, Dasheng ACS Applied Materials & Interfaces, Vol. 9, Issue 13 https://doi.org/10.1021/acsami.6b16559	journal	March 2017
Spontaneous current constriction in threshold switching devices Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09679-9	journal	April 2019
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul Advanced Materials, Vol. 28, Issue 14 https://doi.org/10.1002/adma.201505435	journal	February 2016
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng ACS Nano, Vol. 10, Issue 12 https://doi.org/10.1021/acsnano.6b06275	journal	November 2016
Formation of the Conducting Filament in TaO _x -Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation Ma, Yuanzhi; Li, Dasheng; Herzing, Andrew A. ACS Applied Materials & Interfaces, Vol. 10, Issue 27 https://doi.org/10.1021/acsami.8b03726	journal	June 2018
Stable Metallic Enrichment in Conductive Filaments in TaO _x ‐Based Resistive Switches Arising from Competing Diffusive Fluxes Ma, Yuanzhi; Goodwill, Jonathan M.; Li, Dasheng Advanced Electronic Materials, Vol. 5, Issue 7 https://doi.org/10.1002/aelm.201800954	journal	April 2019
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems Wedig, Anja; Luebben, Michael; Cho, Deok-Yong Nature Nanotechnology, Vol. 11, Issue 1 https://doi.org/10.1038/nnano.2015.221	journal	September 2015
Switching dynamics of TaO x -based threshold switching devices Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A. Journal of Applied Physics, Vol. 123, Issue 11 https://doi.org/10.1063/1.5020070	journal	March 2018
Intrinsic current overshoot during thermal-runaway threshold switching events in TaO _x devices Goodwill, Jonathan M.; Skowronski, Marek Journal of Applied Physics, Vol. 126, Issue 3 https://doi.org/10.1063/1.5087560	journal	July 2019
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance Kinoshita, K.; Tsunoda, K.; Sato, Y. Applied Physics Letters, Vol. 93, Issue 3 https://doi.org/10.1063/1.2959065	journal	July 2008
Elimination of high transient currents and electrode damage during electroformation of TiO ₂ -based resistive switching devices Lu, Yi Meng; Noman, Mohammad; Chen, Wenhao Journal of Physics D: Applied Physics, Vol. 45, Issue 39 https://doi.org/10.1088/0022-3727/45/39/395101	journal	September 2012
Direct Evidence of the Overshoot Suppression in Ta<sub>2</sub>O<sub>5</sub>-Based Resistive Switching Memory With an Integrated Access Resistor Fan, Yang-Shun; Zhang, Leqi; Crotti, Davide IEEE Electron Device Letters, Vol. 36, Issue 10 https://doi.org/10.1109/LED.2015.2470081	journal	October 2015
Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbO _x Nandi, Sanjoy Kumar; Nath, Shimul Kanti; El‐Helou, Assaad E. Advanced Functional Materials, Vol. 29, Issue 50 https://doi.org/10.1002/adfm.201906731	journal	September 2019
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors Strukov, Dmitri B.; Alibart, Fabien; Stanley Williams, R. Applied Physics A, Vol. 107, Issue 3 https://doi.org/10.1007/s00339-012-6902-x	journal	March 2012
Quantitative, Dynamic TaO _x Memristor/Resistive Random Access Memory Model Lee, Seung Hwan; Moon, John; Jeong, YeonJoo ACS Applied Electronic Materials, Vol. 2, Issue 3 https://doi.org/10.1021/acsaelm.9b00792	journal	February 2020
The chemical fate of the Cd/Se/Te-based quantum dot 705 in the biological system: toxicity implications Lin, Chia-Hua; Chang, Louis W.; Chang, Han Nanotechnology, Vol. 20, Issue 21 https://doi.org/10.1088/0957-4484/20/21/215101	journal	May 2009
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu ACS Applied Materials & Interfaces, Vol. 9, Issue 12 https://doi.org/10.1021/acsami.6b16268	journal	March 2017
Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica Mehonic, Adnan; Buckwell, Mark; Montesi, Luca Advanced Materials, Vol. 28, Issue 34 https://doi.org/10.1002/adma.201601208	journal	June 2016
Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM Cooper, David; Baeumer, Christoph; Bernier, Nicolas Advanced Materials, Vol. 29, Issue 23 https://doi.org/10.1002/adma.201700212	journal	April 2017
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon-rich silicon oxide: Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon-rich silicon oxide Buckwell, Mark; Montesi, Luca; Mehonic, Adnan physica status solidi (c), Vol. 12, Issue 1-2 https://doi.org/10.1002/pssc.201400160	journal	November 2014
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 Szot, Krzysztof; Speier, Wolfgang; Bihlmayer, Gustav Nature Materials, Vol. 5, Issue 4 https://doi.org/10.1038/nmat1614	journal	March 2006
Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3 Menke, T.; Meuffels, P.; Dittmann, R. Journal of Applied Physics, Vol. 105, Issue 6 https://doi.org/10.1063/1.3100209	journal	March 2009
Morphological and electrical changes in TiO ₂ memristive devices induced by electroforming and switching: Morphological and electrical changes in TiO ₂ memristive devices Münstermann, Ruth; Yang, J. Joshua; Strachan, John Paul physica status solidi (RRL) - Rapid Research Letters, Vol. 4, Issue 1-2 https://doi.org/10.1002/pssr.200903347	journal	November 2009
Spectromicroscopic insights for rational design of redox-based memristive devices Baeumer, Christoph; Schmitz, Christoph; Ramadan, Amr H. H. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9610	journal	October 2015
Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices Dittmann, Regina; Muenstermann, Ruth; Krug, Ingo Proceedings of the IEEE, Vol. 100, Issue 6 https://doi.org/10.1109/JPROC.2012.2188771	journal	June 2012
X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices Carta, D.; Guttmann, P.; Regoutz, A. Nanotechnology, Vol. 27, Issue 34 https://doi.org/10.1088/0957-4484/27/34/345705	journal	July 2016
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy Carta, D.; Hitchcock, A. P.; Guttmann, P. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep21525	journal	February 2016
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling Larentis, Stefano; Nardi, Federico; Balatti, Simone IEEE Transactions on Electron Devices, Vol. 59, Issue 9 https://doi.org/10.1109/TED.2012.2202320	journal	September 2012
Oxidation of titanium nitride in oxygen: Behavior of TiN0.83 and TiN0.79 plates Desmaison, J.; Lefort, P.; Billy, M. Oxidation of Metals, Vol. 13, Issue 3 https://doi.org/10.1007/BF00603666	journal	January 1979
Correlation between the transport mechanisms in conductive filaments inside Ta ₂ O ₅ -based resistive switching devices and in substoichiometric TaO _x thin films Rosário, Carlos M. M.; Thöner, Bo; Schönhals, Alexander Applied Physics Letters, Vol. 112, Issue 21 https://doi.org/10.1063/1.5024504	journal	May 2018
A SIMS study of cation and anion diffusion in tantalum oxide Gries, U. N.; Schraknepper, H.; Skaja, K. Physical Chemistry Chemical Physics, Vol. 20, Issue 2 https://doi.org/10.1039/C7CP07441G	journal	January 2018
Synergistic Resistive Switching Mechanism of Oxygen Vacancies and Metal Interstitials in Ta ₂ O ₅ Zhu, Linggang; Zhou, Jian; Guo, Zhonglu The Journal of Physical Chemistry C, Vol. 120, Issue 4 https://doi.org/10.1021/acs.jpcc.5b11080	journal	January 2016
The Migration of Metal and Oxygen during Anodic Film Formation Davies, J. A.; Domeij, B.; Pringle, J. P. S. Journal of The Electrochemical Society, Vol. 112, Issue 7 https://doi.org/10.1149/1.2423662	journal	January 1965
The Measurement of Ionic Mobilities in the Anodic Oxides of Tantalum and Zirconium by a Precision Sectioning Technique Whitton, J. L. Journal of The Electrochemical Society, Vol. 115, Issue 1 https://doi.org/10.1149/1.2411004	journal	January 1968
The anodic oxidation of valve metals—I. Determination of ionic transport numbers by α-spectrometry Khalil, N.; Leach, J. S. L. Electrochimica Acta, Vol. 31, Issue 10 https://doi.org/10.1016/0013-4686(86)80148-7	journal	October 1986
A Comparative Study on the Diffusion Behaviors of Metal and Oxygen Ions in Metal-Oxide-Based Resistance Switches via ab Initio Molecular Dynamics Simulations Xiao, Bo; Yu, Xuefang; Watanabe, Satoshi ACS Applied Electronic Materials, Vol. 1, Issue 4 https://doi.org/10.1021/acsaelm.9b00049	journal	April 2019
Redox Reactions at Cu,Ag/Ta ₂ O ₅ Interfaces and the Effects of Ta ₂ O ₅ Film Density on the Forming Process in Atomic Switch Structures Tsuruoka, Tohru; Valov, Ilia; Tappertzhofen, Stefan Advanced Functional Materials, Vol. 25, Issue 40 https://doi.org/10.1002/adfm.201500853	journal	June 2015
Nanoscale density variations in sputtered amorphous TaO _x functional layers in resistive switching devices Xu, Qiyun; Ma, Yuanzhi; Skowronski, Marek Journal of Applied Physics, Vol. 127, Issue 5 https://doi.org/10.1063/1.5134098	journal	February 2020
Effect of thermal insulation on the electrical characteristics of NbO _x threshold switches Wang, Ziwen; Kumar, Suhas; Wong, H. -S. Philip Applied Physics Letters, Vol. 112, Issue 7 https://doi.org/10.1063/1.5015941	journal	February 2018

Similar Records

Formation of the Conducting Filament in TaO_x-Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation

Journal Article · Mon Jun 18 00:00:00 EDT 2018 · ACS Applied Materials and Interfaces · OSTI ID:1708843

Ma, Yuanzhi; Li, Dasheng; Herzing, Andrew A.; +6 more

Stable Metallic Enrichment in Conductive Filaments in TaO_x–Based Resistive Switches Arising from Competing Diffusive Fluxes

Journal Article · Mon Apr 29 00:00:00 EDT 2019 · Advanced Electronic Materials · OSTI ID:1708843

Ma, Yuanzhi; Goodwill, Jonathan M.; Li, Dasheng; +5 more

In situ TEM study of reversible and irreversible electroforming in Pt/Ti:NiO/Pt heterostructures: In situ TEM study of reversible and irreversible electroforming in Pt/Ti:NiO/Pt heterostructures

Journal Article · Tue Apr 14 00:00:00 EDT 2015 · Physica Status Solidi rrl · OSTI ID:1708843

D'Aquila, Kenneth; Liu, Yuzi; Iddir, Hakim; +1 more

Related Subjects

36 MATERIALS SCIENCE
resistive switching devices
valence change model
electroformation
electroreduction
interdiffusion

Title: Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices

Citation Formats

References (52)

Similar Records

Related Subjects

Title: Exchange of Ions across the TiN/TaO_x Interface during Electroformation of TaO_x-Based Resistive Switching Devices