Influence of sputtering power on the optical properties of ITO thin films

Journal Article · Wed Oct 15 04:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4898214· OSTI ID:22308008

K, Aijo John; M, Deepak; T, Manju ^[1]; Kumar, Vineetha V. ^[2]

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1. Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India)
2. Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

• OSTI ID: 22308008
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1620; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
CRYSTALS
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
ENERGY GAP
INDIUM OXIDES
LIGHT EMITTING DIODES
OPACITY
REFRACTIVE INDEX
SPECTROPHOTOMETRY
SPUTTERING
THIN FILMS
TIN COMPOUNDS