Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

Journal Article · Sun Sep 28 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896834· OSTI ID:22305723

Ashuach, Y.; Lakin, E.; Kaufmann, Y. ^[1]; Saguy, C. ^[2]

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1. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
2. Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel)

A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7 nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.

• OSTI ID: 22305723
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANIONS
CATIONS
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
INFRARED RADIATION
INTERFACES
PHOTODETECTORS
RESOLUTION
ROUGHNESS
SCANNING TUNNELING MICROSCOPY
SIMULATION
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS
X-RAY DIFFRACTION