Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

Journal Article · Thu Mar 14 04:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4794193· OSTI ID:22102297

Kim, Honggyu; Yifei, Meng; Jianmin, Zuo ^[1]; Rouviere, Jean-Luc ^[2]; Isheim, Dieter; Seidman, David N. ^[3]

---

1. Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
2. CEA/INAC/SP2M/LEMMA, 19 rue des Martyrs, 38 054 Grenoble (France)
3. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

• OSTI ID: 22102297
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
CORRELATIONS
DISTRIBUTION
GALLIUM ANTIMONIDES
IMAGE PROCESSING
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
RESOLUTION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
SURFACES
TOMOGRAPHY