Evaluation of hole-spin superposition in GaAs/AlGaAs quantum wells through time-resolved photoluminescence measurements
- Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan)
- Department of Physics, Faculty of Science and Engineering, Konan University, 8-9-1 Okamoto, Higasinada-ku, Kobe 658-8501 (Japan)
Relaxation dynamics of the up–down superposition of hole spins in undoped GaAs/AlGaAs quantum wells were investigated by means of time-resolved photoluminescence (PL) measurements with a view toward achieving quantum bits using hole spins. Linearly polarized PL signals reflecting the hole-spin superposition were observed using linearly polarized excitation light under quasi-resonant excitation conditions. In contrast to circular-polarization experiments conducted under nonresonant excitation conditions, the decay time of the degree of linear polarization obtained from the time-resolved PL signal increased slightly with increasing quantum confinement energy. These experimental results demonstrate that the creation and observation of hole-spin superposition under resonant conditions are crucial for manipulating hole-spin quantum bits.
- OSTI ID:
- 22304454
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
An (AlGaAs/GaAs/AlGaAs){sub 60} resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells
Effects of spin diffusion on electron spin relaxation time measured with a time-resolved microscopic photoluminescence technique