An (AlGaAs/GaAs/AlGaAs){sub 60} resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Photoluminescence and optical-reflection spectra of a periodic structure consisting of 60 tunneling-isolated GaAs quantum wells separated by AlGaAs barriers are studied. The structure is designed so that, for a certain angle of incidence ({approx}23{sup o}), the Bragg resonance condition is satisfied for light with a photon energy equal to the energy of heavy-hole excitons at the second quantum-confinement level in the wells. It is established experimentally that, under the conditions of double exciton-polariton and Bragg resonance, a superradiant optical mode is formed. Dependences of Bragg and exciton-polariton reflection on the angle of incidence and polarization of light and the temperature are investigated.
- OSTI ID:
- 21562217
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CONFINEMENT
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EMISSION
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INCIDENCE ANGLE
LUMINESCENCE
MASSLESS PARTICLES
NANOSTRUCTURES
OPTICAL MODES
OPTICAL REFLECTION
OSCILLATION MODES
PERIODICITY
PHOTOLUMINESCENCE
PHOTON EMISSION
PHOTONS
PNICTIDES
POLARIZATION
QUANTUM WELLS
QUASI PARTICLES
RADIATIONS
REFLECTION
RESONANCE
SPECTRA
TUNNEL EFFECT
VARIATIONS
VISIBLE RADIATION