Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

An (AlGaAs/GaAs/AlGaAs){sub 60} resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells

Journal Article · · Semiconductors
;  [1]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Photoluminescence and optical-reflection spectra of a periodic structure consisting of 60 tunneling-isolated GaAs quantum wells separated by AlGaAs barriers are studied. The structure is designed so that, for a certain angle of incidence ({approx}23{sup o}), the Bragg resonance condition is satisfied for light with a photon energy equal to the energy of heavy-hole excitons at the second quantum-confinement level in the wells. It is established experimentally that, under the conditions of double exciton-polariton and Bragg resonance, a superradiant optical mode is formed. Dependences of Bragg and exciton-polariton reflection on the angle of incidence and polarization of light and the temperature are investigated.

OSTI ID:
21562217
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 44; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English