Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy

Ducatel, J.; Padawer-Blatt, A.; Bogan, A.; Korkusinski, M.; Zawadzki, P.; Sachrajda, A.; Studenikin, S.; Tracy, L.; Reno, J.; Hargett, T.

doi:10.1063/5.0044933

Title: Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy

Journal Article · Mon May 24 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0044933· OSTI ID:1828028

^[1];

^[2]; Korkusinski, M. ^[2]; Zawadzki, P. ^[2]; Sachrajda, A. ^[2];

^[1]; Tracy, L. ^[3]; Reno, J. ^[3]; Hargett, T. ^[3]

National Research Council of Canada, Ottawa, ON (Canada); Univ. of Waterloo, ON (Canada)
National Research Council of Canada, Ottawa, ON (Canada)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we report a detailed study of the tunnel barriers within a single-hole GaAs/AlGaAs double quantum dot device (DQD). For quantum information applications as well as fundamental studies, careful tuning and reliable measurements of the barriers are important requirements. In order to tune a DQD device adequately into the single-hole electric dipole spin resonance regime, one has to employ a variety of techniques to cover the extended range of tunnel couplings. In this work, we demonstrate four separate techniques, based upon charge sensing, quantum transport, time-resolved pulsing, and electron dipole spin resonance spectroscopy to determine the couplings as a function of relevant gate voltages and magnetic field. Measurements were performed under conditions of both symmetric and asymmetric tunnel couplings to the leads. Good agreement was observed between different techniques when measured under the same conditions. The results indicate that even in this relatively simple circuit, the requirement to tune multiple gates and the consequences of real potential profiles result in non-intuitive dependencies of the couplings as a function of the plunger gate voltage and the magnetic field.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 1828028

Report Number(s):: SAND-2021-5412J; 695986; TRN: US2215993

Journal Information:: Applied Physics Letters, Vol. 118, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (24)

Single hole spin relaxation probed by fast single-shot latched charge sensing Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek Communications Physics, Vol. 2, Issue 1 https://doi.org/10.1038/s42005-019-0113-0	journal	February 2019
Signatures of Hyperfine, Spin-Orbit, and Decoherence Effects in a Pauli Spin Blockade Fujita, T.; Stano, P.; Allison, G. Physical Review Letters, Vol. 117, Issue 20 https://doi.org/10.1103/PhysRevLett.117.206802	journal	November 2016
A single-hole spin qubit Hendrickx, N. W.; Lawrie, W. I. L.; Petit, L. Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-17211-7	journal	July 2020
Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot Liles, S. D.; Li, R.; Yang, C. H. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-05700-9	journal	August 2018
Mapping electron delocalization by charge transport spectroscopy in an artificial molecule Gräber, M. R.; Weiss, M.; Keller, D. Annalen der Physik, Vol. 16, Issue 10-11 https://doi.org/10.1002/andp.200710256	journal	October 2007
Determination of energy scales in few-electron double quantum dots Taubert, D.; Schuh, D.; Wegscheider, W. Review of Scientific Instruments, Vol. 82, Issue 12 https://doi.org/10.1063/1.3673003	journal	December 2011
Single and double hole quantum dots in strained Ge/SiGe quantum wells Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin Nanotechnology, Vol. 30, Issue 21 https://doi.org/10.1088/1361-6528/ab061e	journal	March 2019
Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot DiCarlo, L.; Lynch, H. J.; Johnson, A. C. Physical Review Letters, Vol. 92, Issue 22 https://doi.org/10.1103/PhysRevLett.92.226801	journal	June 2004
Fast two-qubit logic with holes in germanium Hendrickx, N. W.; Franke, D. P.; Sammak, A. Nature, Vol. 577, Issue 7791 https://doi.org/10.1038/s41586-019-1919-3	journal	January 2020
Undoped high mobility two-dimensional hole-channel GaAs∕AlxGa1−xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric Lu, T. M.; Luhman, D. R.; Lai, K. Applied Physics Letters, Vol. 90, Issue 11 https://doi.org/10.1063/1.2714094	journal	March 2007
Electron transport through double quantum dots van der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M. Reviews of Modern Physics, Vol. 75, Issue 1 https://doi.org/10.1103/RevModPhys.75.1	journal	December 2002
Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot Simmons, C. B.; Thalakulam, Madhu; Rosemeyer, B. M. Nano Letters, Vol. 9, Issue 9 https://doi.org/10.1021/nl9014974	journal	September 2009
Charge sensing of an artificial $H_{2}^{+}$ molecule in lateral quantum dots Pioro-Ladrière, M.; Abolfath, M. R.; Zawadzki, P. Physical Review B, Vol. 72, Issue 12 https://doi.org/10.1103/PhysRevB.72.125307	journal	September 2005
Automated tuning of inter-dot tunnel coupling in double quantum dots van Diepen, C. J.; Eendebak, P. T.; Buijtendorp, B. T. Applied Physics Letters, Vol. 113, Issue 3 https://doi.org/10.1063/1.5031034	journal	July 2018
Mesoscopic structures and two-dimensional hole systems in fully field effect controlled heterostructures Willett, R. L.; Manfra, M. J.; Pfeiffer, L. N. Applied Physics Letters, Vol. 91, Issue 3 https://doi.org/10.1063/1.2757128	journal	July 2007
Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction Studenikin, Sergei; Korkusinski, Marek; Bogan, Alex Semiconductor Science and Technology, Vol. 36, Issue 5 https://doi.org/10.1088/1361-6641/abe42d	journal	April 2021
Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek Physical Review Letters, Vol. 120, Issue 20 https://doi.org/10.1103/PhysRevLett.120.207701	journal	May 2018
Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure Tracy, L. A.; Hargett, T. W.; Reno, J. L. Applied Physics Letters, Vol. 104, Issue 12 https://doi.org/10.1063/1.4868971	journal	March 2014
Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot Wang, Daisy Q.; Klochan, Oleh; Hung, Jo-Tzu Nano Letters, Vol. 16, Issue 12 https://doi.org/10.1021/acs.nanolett.6b03752	journal	December 2016
A germanium hole spin qubit Watzinger, Hannes; Kukučka, Josip; Vukušić, Lada Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-06418-4	journal	September 2018
Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot Studenikin, Sergei; Korkusinski, Marek; Takahashi, Motoi Communications Physics, Vol. 2, Issue 1 https://doi.org/10.1038/s42005-019-0262-1	journal	December 2019
Molecular states in carbon nanotube double quantum dots Gräber, M. R.; Coish, W. A.; Hoffmann, C. Physical Review B, Vol. 74, Issue 7 https://doi.org/10.1103/PhysRevB.74.075427	journal	August 2006
Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic $g$ Factor Bogan, A.; Studenikin, S. A.; Korkusinski, M. Physical Review Letters, Vol. 118, Issue 16 https://doi.org/10.1103/PhysRevLett.118.167701	journal	April 2017
GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing Maradan, D.; Casparis, L.; Liu, T. -M. Journal of Low Temperature Physics, Vol. 175, Issue 5-6 https://doi.org/10.1007/s10909-014-1169-6	journal	April 2014

Similar Records

Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction

Journal Article · Tue Apr 06 00:00:00 EDT 2021 · Semiconductor Science and Technology · OSTI ID:1828028

Studenikin, Sergei; Korkusinski, Marek; Bogan, Alex; +6 more

Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Journal Article · Wed May 11 00:00:00 EDT 2022 · Physical Review. B · OSTI ID:1828028

Padawer-Blatt, Aviv; Ducatel, Jordan; Korkusinski, M.; +9 more

Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot

Journal Article · Fri Dec 13 00:00:00 EST 2019 · Communications Physics · OSTI ID:1828028

Studenikin, Sergei; Korkusinski, Marek; Takahashi, Motoi; +11 more

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
Spin transistor
Quantum information
Quantum dots
Electronic transport
Spectroscopy

Title: Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy

Citation Formats

References (24)

Similar Records

Related Subjects