Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Padawer-Blatt, Aviv; Ducatel, Jordan; Korkusinski, M.; Bogan, Alex; Gaudreau, Louis; Zawadzki, Piotr; Austing, D. Guy; Sachrajda, Andrew S.; Studenikin, Sergei; Tracy, Lisa; Reno, John; Hargett, Terry

doi:10.1103/physrevb.105.195305

Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Journal Article · Wed May 11 00:00:00 EDT 2022 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.105.195305· OSTI ID:1871996

^[1]; ^[1]; Korkusinski, M. ^[2]; Bogan, Alex ^[2]; Gaudreau, Louis ^[2]; Zawadzki, Piotr ^[2]; Austing, D. Guy ^[2]; Sachrajda, Andrew S. ^[2]; ^[2]; Tracy, Lisa ^[3]; Reno, John ^[3]; Hargett, Terry ^[3]

National Research Council of Canada, Ottawa, ON (Canada); Univ. of Waterloo, ON (Canada)
National Research Council of Canada, Ottawa, ON (Canada)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1871996

Report Number(s):: SAND2022-6543J; 705962

Journal Information:: Physical Review. B, Journal Name: Physical Review. B Journal Issue: 19 Vol. 105; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

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