Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot

Studenikin, Sergei; Korkusinski, Marek; Takahashi, Motoi; Ducatel, Jordan; Padawer-Blatt, Aviv; Bogan, Alex; Austing, D. Guy; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andrew; Hirayama, Yoshiro; Tracy, Lisa; Reno, John; Hargett, Terry

doi:10.1038/s42005-019-0262-1

Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot

Journal Article · Thu Dec 12 23:00:00 EST 2019 · Communications Physics

DOI:https://doi.org/10.1038/s42005-019-0262-1· OSTI ID:1595023

Studenikin, Sergei ^[1]; Korkusinski, Marek ^[1]; Takahashi, Motoi ^[2]; Ducatel, Jordan ^[1]; ^[1]; Bogan, Alex ^[1]; Austing, D. Guy ^[1]; Gaudreau, Louis ^[1]; Zawadzki, Piotr ^[1]; Sachrajda, Andrew ^[1]; Hirayama, Yoshiro ^[3]; Tracy, Lisa ^[4]; Reno, John ^[4]; Hargett, Terry ^[4]

National Research Council of Canada, Ottawa, ON (Canada)
National Research Council of Canada, Ottawa, ON (Canada); Tohoku Univ., Sendai (Japan)
Tohoku Univ., Sendai (Japan)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Electrical tunability of the $$g$$-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective $$g$$-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1595023

Report Number(s):: SAND--2019-14630J; 682478

Journal Information:: Communications Physics, Journal Name: Communications Physics Journal Issue: 1 Vol. 2; ISSN 2399-3650

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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