Light trapping in thin-film solar cells measured by Raman spectroscopy
- Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland)
- Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague (Czech Republic)
In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (μc-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442 nm, 514 nm, 633 nm, and 785 nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the μc-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the μc-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.
- OSTI ID:
- 22303484
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Disorder improves nanophotonic light trapping in thin-film solar cells
Enhanced optical absorption produced by light trapping in amorphous silicon films
Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells
Journal Article
·
Mon Mar 31 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22261634
Enhanced optical absorption produced by light trapping in amorphous silicon films
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5379667
Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells
Conference
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:304334