Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

Journal Article · Mon May 19 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4879022· OSTI ID:22300215

Chu, R. L. ^[1]; Liu, Y. C.; Lee, W. C.; Huang, M. L.; Lin, T. D.; Pi, T. W. ^[2]

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1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.

• OSTI ID: 22300215
• Journal Information: Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BEAMS
CAPACITANCE
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
EPITAXY
GERMANIUM
INTERFACES
LAYERS
MOLECULES
OXIDES
PASSIVATION
ROUGHNESS
SCANNING TUNNELING MICROSCOPY
SUBSTRATES
SURFACES
TRAPS
X-RAY PHOTOELECTRON SPECTROSCOPY