Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)
- Univ. of Texas, Arlington, TX (United States)
- North Carolina State Univ., Raleigh, NC (United States)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Here, we present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-76RL01830; 10122
- OSTI ID:
- 1398193
- Alternate ID(s):
- OSTI ID: 1377670
- Report Number(s):
- PNNL-SA-126528; 49306; KC0203020
- Journal Information:
- Journal of Applied Physics, Vol. 122, Issue 8; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
|
journal | July 2019 |
Crystalline SrZrO 3 deposition on Ge (001) by atomic layer deposition for high- k dielectric applications
|
journal | July 2018 |
Interfacial structure of SrZr x Ti 1− x O 3 films on Ge
|
journal | November 2018 |
Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge | text | January 2018 |
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