Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

doi:10.1063/1.5000142

Title: Structural and electrical properties of single crystalline SrZrO₃ epitaxially grown on Ge (001)

Journal Article · Mon Aug 28 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5000142· OSTI ID:1398193

Lim, Z. H. ^[1]; Ahmadi-Majlan, K. ^[1]; Grimley, E. D. ^[2];

^[3]; Bowden, M. ^[3]; Moghadam, R. ^[1]; LeBeau, J. M. ^[2]; Chambers, S. A. ^[3]; Ngai, J. H. ^[1]

Univ. of Texas, Arlington, TX (United States)
North Carolina State Univ., Raleigh, NC (United States)
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Here, we present structural and electrical characterization of SrZrO₃ that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO₃ can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO₃ exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO₃ exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-76RL01830; 10122

OSTI ID:: 1398193

Alternate ID(s):: OSTI ID: 1377670

Report Number(s):: PNNL-SA-126528; 49306; KC0203020

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 8; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 10 works

Citation information provided by
Web of Science

References (28)

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst Ji, Li; McDaniel, Martin D.; Wang, Shijun Nature Nanotechnology, Vol. 10, Issue 1 https://doi.org/10.1038/nnano.2014.277	journal	December 2014
Epitaxial integration of perovskite-based multifunctional oxides on silicon Baek, Seung-Hyub; Eom, Chang-Beom Acta Materialia, Vol. 61, Issue 8 https://doi.org/10.1016/j.actamat.2012.09.073	journal	May 2013
Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge Sang, Xiahan; LeBeau, James M. Ultramicroscopy, Vol. 138 https://doi.org/10.1016/j.ultramic.2013.12.004	journal	March 2014
Growth of SrTiO ₃ on Si(001) by hybrid molecular beam epitaxy : Growth of SrTiO Zhang, Lei; Engel-Herbert, Roman physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 11 https://doi.org/10.1002/pssr.201409383	journal	September 2014
Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy Brooks, C. M.; Kourkoutis, L. Fitting; Heeg, T. Applied Physics Letters, Vol. 94, Issue 16 https://doi.org/10.1063/1.3117365	journal	April 2009
Crystalline Oxides on Silicon: The First Five Monolayers McKee, R. A.; Walker, F. J.; Chisholm, M. F. Physical Review Letters, Vol. 81, Issue 14 https://doi.org/10.1103/PhysRevLett.81.3014	journal	October 1998
Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic Kornblum, L.; Fenning, D. P.; Faucher, J. Energy & Environmental Science, Vol. 10, Issue 1 https://doi.org/10.1039/C6EE03170F	journal	January 2017
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates Martens, Koen; Chui, Chi On; Brammertz, Guy IEEE Transactions on Electron Devices, Vol. 55, Issue 2 https://doi.org/10.1109/TED.2007.912365	journal	February 2008
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric IEEE Electron Device Letters, Vol. 23, Issue 8 https://doi.org/10.1109/LED.2002.801319	journal	August 2002
A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices Hu, Chengqing; McDaniel, Martin D.; Jiang, Aiting ACS Applied Materials & Interfaces, Vol. 8, Issue 8 https://doi.org/10.1021/acsami.5b10661	journal	February 2016
Ferroelectric Field Effect Transistors for Memory Applications Hoffman, Jason; Pan, Xiao; Reiner, James W. Advanced Materials, Vol. 22, Issue 26-27 https://doi.org/10.1002/adma.200904327	journal	April 2010
Transport at the Epitaxial Interface between Germanium and Functional Oxides Kornblum, Lior; Morales-Acosta, Mayra D.; Jin, Eric N. Advanced Materials Interfaces, Vol. 2, Issue 18 https://doi.org/10.1002/admi.201500193	journal	October 2015
Surface and interface chemical composition of thin epitaxial SrTiO3 and BaTiO3 films: Photoemission investigation Amy, F.; Wan, A.; Kahn, A. Journal of Applied Physics, Vol. 96, Issue 3 https://doi.org/10.1063/1.1765855	journal	August 2004
Zintl layer formation during perovskite atomic layer deposition on Ge (001) Hu, Shen; Lin, Edward L.; Hamze, Ali K. The Journal of Chemical Physics, Vol. 146, Issue 5 https://doi.org/10.1063/1.4972071	journal	February 2017
Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan Advanced Materials Interfaces, Vol. 2, Issue 4 https://doi.org/10.1002/admi.201400497	journal	February 2015
Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide McKee, R. A. Science, Vol. 293, Issue 5529 https://doi.org/10.1126/science.293.5529.468	journal	July 2001
Crystal Structures and Phase Transitions in the SrTiO3–SrZrO3 Solid Solution Wong, Tony Kam-Yuen; Kennedy, Brendan J.; Howard, Christopher J. Journal of Solid State Chemistry, Vol. 156, Issue 2 https://doi.org/10.1006/jssc.2000.8896	journal	February 2001
Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices Swaminathan, Shankar; Shandalov, Michael; Oshima, Yasuhiro Applied Physics Letters, Vol. 96, Issue 8 https://doi.org/10.1063/1.3313946	journal	February 2010
The effects of core-level broadening in determining band alignment at the epitaxial SrTiO ₃ (001)/ p -Ge(001) heterojunction Chambers, Scott A.; Du, Yingge; Comes, Ryan B. Applied Physics Letters, Vol. 110, Issue 8 https://doi.org/10.1063/1.4977422	journal	February 2017
Band offset and structure of SrTiO3 /Si(001) heterojunctions Chambers, S. A.; Liang, Y.; Yu, Z. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3 https://doi.org/10.1116/1.1365132	journal	May 2001
Electrically coupling complex oxides to semiconductors: A route to novel material functionalities Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J. Journal of Materials Research, Vol. 32, Issue 2 https://doi.org/10.1557/jmr.2016.496	journal	January 2017
Band offsets at the epitaxial SrTiO ₃ /SrZrO ₃ (0 0 1) heterojunction Schafranek, R.; Baniecki, J. D.; Ishii, M. Journal of Physics D: Applied Physics, Vol. 45, Issue 5 https://doi.org/10.1088/0022-3727/45/5/055303	journal	January 2012
Field-effect transistors with SrHfO3 as gate oxide Rossel, C.; Mereu, B.; Marchiori, C. Applied Physics Letters, Vol. 89, Issue 5 https://doi.org/10.1063/1.2236464	journal	July 2006
Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy Landemark, Erik; Karlsson, C. J.; Johansson, L. S. O. Physical Review B, Vol. 49, Issue 23 https://doi.org/10.1103/PhysRevB.49.16523	journal	June 1994
Preparation of a clean Ge(001) surface using oxygen plasma cleaning Ponath, Patrick; Posadas, Agham B.; Hatch, Richard C. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3 https://doi.org/10.1116/1.4798390	journal	May 2013
Atomic layer deposition of crystalline SrHfO ₃ directly on Ge (001) for high- k dielectric applications McDaniel, Martin D.; Hu, Chengqing; Lu, Sirong Journal of Applied Physics, Vol. 117, Issue 5 https://doi.org/10.1063/1.4906953	journal	February 2015
Correlated Oxide Physics and Electronics Ngai, J. H.; Walker, F. J.; Ahn, C. H. Annual Review of Materials Research, Vol. 44, Issue 1 https://doi.org/10.1146/annurev-matsci-070813-113248	journal	July 2014
Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal Shen, Xuan; Ahmadi-Majlan, K.; Ngai, Joseph H. Applied Physics Letters, Vol. 106, Issue 3 https://doi.org/10.1063/1.4906430	journal	January 2015

Cited By (4)

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior Advanced Functional Materials https://doi.org/10.1002/adfm.201901597	journal	July 2019
Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications Hu, Shen; Ji, Li; Chen, Pei-Yu Journal of Applied Physics, Vol. 124, Issue 4 https://doi.org/10.1063/1.5026790	journal	July 2018
Interfacial structure of SrZr _x Ti ₁₋ _x O ₃ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui Applied Physics Letters, Vol. 113, Issue 20 https://doi.org/10.1063/1.5046394	journal	November 2018
Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui arXiv https://doi.org/10.48550/arxiv.1806.11140	text	January 2018

Similar Records

Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

Journal Article · Sat Feb 07 00:00:00 EST 2015 · Journal of Applied Physics · OSTI ID:1398193

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Chengqing; +6 more

B-doped fully strained Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers grown on Si(001) by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}: Charge transport properties

Journal Article · Tue Oct 01 00:00:00 EDT 1996 · Journal of Applied Physics · OSTI ID:1398193

Lu, Q; Sardela, Jr, M R; Bramblett, T R; +1 more

Growth, microstructure, and strain relaxation in low-temperature epitaxial Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloys deposited on Si(001) from hyperthermal beams

Journal Article · Mon Jul 01 00:00:00 EDT 1996 · Journal of Applied Physics · OSTI ID:1398193

Lee, N; Matsuoka, M; Sardela, Jr, M R; +2 more

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
Environmental Molecular Sciences Laboratory

Title: Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

Citation Formats

References (28)

Cited By (4)

Similar Records

Related Subjects

Title: Structural and electrical properties of single crystalline SrZrO₃ epitaxially grown on Ge (001)