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Design of radiation resistant metallic multilayers for advanced nuclear systems

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4883481· OSTI ID:22299885
; ; ; ; ;  [1]; ;  [2];  [3]
  1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

Helium implantation from transmutation reactions is a major cause of embrittlement and dimensional instability of structural components in nuclear energy systems. Development of novel materials with improved radiation resistance, which is of the utmost importance for progress in nuclear energy, requires guidelines to arrive at favorable parameters more efficiently. Here, we present a methodology that can be used for the design of radiation tolerant materials. We used synchrotron X-ray reflectivity to nondestructively study radiation effects at buried interfaces and measure swelling induced by He implantation in Cu/Nb multilayers. The results, supported by transmission electron microscopy, show a direct correlation between reduced swelling in nanoscale multilayers and increased interface area per unit volume, consistent with helium storage in Cu/Nb interfaces in forms that minimize dimensional changes. In addition, for Cu/Nb layers, a linear relationship is demonstrated between the measured depth-dependent swelling and implanted He density from simulations, making the reflectivity technique a powerful tool for heuristic material design.

OSTI ID:
22299885
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 104; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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Cited By (2)

Carbon Nanotubes Enhance the Radiation Resistance of bcc Iron Revealed by Atomistic Study journal January 2019
Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide journal June 2017