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Design of 1500V/200kW 99.6% Efficiency Dual Active Bridge Converters Based on 1700V SiC Power MOSFET Module

Conference · · 2020 IEEE Energy Conversion Congress and Exposition (ECCE)

High efficiency, high density and galvanically isolated power converters are attractive for medium voltage high power applications. This paper presents a 1.5kV/200kW bidirectional Dual Active Bridge (DAB) converter using a newly developed 1.7kV SiC MOSFET module. The intended application is megawatt scale solid state transformer (SST) and 1500V PV inverter application using modular architecture. One novel model to estimate the turn-off loss using snubber capacitors is proposed and experimentally verified. An optimized PCB-based busbar design is introduced to reduce the voltage overshoot across the SiC device, making the design suitable for 1.5kVdc applications. The mechanism of how the optimized PCB-based busbar can reduce the voltage overshoot is quantitatively interpreted and experimentally verified. The DAB converter achieved an efficiency of 98.85% at 200kW and a maximum of 99.53% at 60kW. The maximum efficiency for series-resonant mode is 99.6% at 85kW and 99.3% at 200kW. The power density is 26W/inch3 (1.6MW/m3) which is much higher than traditional industry products.

Research Organization:
University of Texas at Austin
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0008348
OSTI ID:
2229095
Journal Information:
2020 IEEE Energy Conversion Congress and Exposition (ECCE), Journal Name: 2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Country of Publication:
United States
Language:
English

References (12)

Analytic model for power MOSFET turn-off switching loss under the effect of significant current diversion at fast switching events conference March 2018
Medium-Voltage SiC-Based Converter Laminated Bus Insulation Design and Assessment journal September 2019
Analysis of High-Speed PCB With SiC Devices by Investigating Turn-Off Overvoltage and Interconnection Inductance Influence journal August 2015
Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET conference March 2020
Different Purpose Design Strategies and Techniques to Improve the Performance of a Dual Active Bridge With Phase-Shift Control journal February 2015
Estimation and minimization of power loop inductance in 135 kW SiC traction inverter conference March 2018
Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance journal January 2013
An Accurate Calorimetric Loss Measurement Method for SiC MOSFETs journal June 2020
Fundamentals of Power Semiconductor Devices book January 2008
Switching Loss Analysis of SiC-MOSFET based on Stray Inductance Scaling conference May 2018
Temperature dependence of breakdown in anisotropic 6H-SiC MOSFET conference October 2008
Low stray inductance bus bar design and construction for good EMC performance in power electronic circuits journal March 2002

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