Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET

Xu, Wei; Guo, Zhicheng; Tayebi, S. Milad; Rajendran, Sanjay; Sun, Ao; Yu, Ruiyang; Huang, Alex Q.

doi:10.1109/apec39645.2020.9124401

Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET

Conference · Sat Feb 29 23:00:00 EST 2020 · 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI:https://doi.org/10.1109/apec39645.2020.9124401· OSTI ID:2229091

Xu, Wei ^[1]; Guo, Zhicheng; Tayebi, S. Milad; Rajendran, Sanjay; Sun, Ao; Yu, Ruiyang; Huang, Alex Q.

University of Texas at Austin

High efficiency, high density and galvanically isolated power converters are attractive for numerous medium voltage high power applications. This paper presents a 1.5kVdc, 100kW bidirectional Dual Active Half Bridge (DAHB) using newly developed 1.7kV SiC MOSFET modules. The DAHB achieved an efficiency of 98.6% at full load of 100kW and a maximum of 99% at 45kW, operating as an isolated DC/DC converter. The converter also achieved an efficiency of 97.8% operating as an isolated DC/AC inverter. An optimized PCB-based busbar design has significantly reduced the voltage overshoot across the device, making the design suitable for 1500Vdc input application such as 1500V PV inverters. Typical partial discharge inception voltage (PDIV) of the optimized PCB busbar is 1.7kVpeak with total charge <10pC. The power density of the DAHB converter is 1.8MVA/m 3 which is much higher than traditional two-stage industry products. The DAHB converter can be used as a building block for a 4.16kV/1MVA utility scale PV systems with input parallel and output series configuration.

Research Organization:: University of Texas at Austin

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008348

OSTI ID:: 2229091

Journal Information:: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), Journal Name: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

Country of Publication:: United States

Language:: English

References (8)

Medium-Voltage SiC-Based Converter Laminated Bus Insulation Design and Assessment Xu, Yue; Feng, Xianyong; Wang, Jun IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 7, Issue 3 https://doi.org/10.1109/JESTPE.2019.2922332	journal	September 2019
A Cost-Effective Single-Stage Inverter With Maximum Power Point Tracking Chen, Y.; Smedley, K. M. IEEE Transactions on Power Electronics, Vol. 19, Issue 5 https://doi.org/10.1109/TPEL.2004.833458	journal	September 2004
Different Purpose Design Strategies and Techniques to Improve the Performance of a Dual Active Bridge With Phase-Shift Control Rodriguez, Alberto; Vazquez, Aitor; Lamar, Diego G. IEEE Transactions on Power Electronics, Vol. 30, Issue 2 https://doi.org/10.1109/TPEL.2014.2309853	journal	February 2015
A dynamic measurement method for parasitic capacitances of high voltage SiC MOSFETs Song, Xiaoqing; Huang, Alex Q.; Lee, Mengjia 2015 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ECCE.2015.7309788	conference	September 2015
Estimation and minimization of power loop inductance in 135 kW SiC traction inverter Aberg, Bryce; Moorthy, Radha Sree Krishna; Yang, Li 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2018.8341257	conference	March 2018
A study of dynamic high voltage output charge measurement for 15 kV SiC MOSFET Wang, Li; Zhu, Qianlai; Yu, Wensong 2016 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ECCE.2016.7854789	conference	September 2016
A Review of Single-Phase Grid-Connected Inverters for Photovoltaic Modules Kjaer, S. B.; Pedersen, J. K.; Blaabjerg, F. IEEE Transactions on Industry Applications, Vol. 41, Issue 5, p. 1292-1306 https://doi.org/10.1109/TIA.2005.853371	journal	September 2005
Temperature dependence of breakdown in anisotropic 6H-SiC MOSFET Li, Liu; Yin-tang, Yang; Chang-chun, Chai 2008 9th International Conference on Solid-State and Integrated-Circuit Technology https://doi.org/10.1109/ICSICT.2008.4734735	conference	October 2008

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