Oxygen-induced inhibition of silicon-on-insulator dewetting
- Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France)
We report that solid state dewetting of Si thin film on SiO{sub 2} can be reversibly inhibited by exposing the Si surface to a partial pressure of dioxygen (∼10{sup −7}Torr) at high temperature (∼1100K). Coupling in situ Low-Energy Electron Microscopy and ex situ atomic force microscopy we propose that the pinning of the contact line induced by the presence of small amounts of silicon oxide is the main physical process that inhibits the dewetting.
- OSTI ID:
- 22283170
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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