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Title: Degeneracy and effective mass in the valence band of two-dimensional (100)-GaAs quantum well systems

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4867086· OSTI ID:22283070
; ; ;  [1]; ;  [2]
  1. Department of Physics and Astronomy, Wayne State University, 666 W. Hancock, Detroit, Michigan 48201 (United States)
  2. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

Quantum Hall measurement of two-dimensional high-mobility [μ∼2×10{sup 6} cm{sup 2}/(V·s)] hole systems confined in a 20 nm wide (100)-GaAs quantum well have been performed for charge densities between 4 and 5 × 10{sup 10} cm{sup −2} in a temperature range of 10–160 mK. The Fourier analysis of the Shubnikov-de Haas (SdH) oscillations of the magnetoresistance vs. the inverse of the magnetic field 1/B reveals a single peak, indicating a degenerate heavy hole (HH) band. The hole density p=(e/h)·f agrees with the Hall measurement result within 3%. The HH band degeneracy is understood through the diminishing spin-orbit interaction due to the low charge density and the nearly symmetric confinement. SdH oscillations fitted for 0.08 T ≤ B ≤ 0.24 T to the Dingle parameters yield an effective mass between 0.30 and 0.50 m{sub e} in good agreement with previous cyclotron resonance results.

OSTI ID:
22283070
Journal Information:
Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English