Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

doi:10.1103/physrevapplied.9.024006

Title: Scatterings and Quantum Effects in $(Al, In) N / GaN$ Heterostructures for High-Power and High-Frequency Electronics

Journal Article · Wed Feb 07 00:00:00 EST 2018 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.9.024006· OSTI ID:1540701

Wang, Leizhi ^[1]; Yin, Ming ^[2]; Khan, Asif ^[1]; Muhtadi, Sakib ^[1]; Asif, Fatima ^[1]; Choi, Eun Sang ^[3]; Datta, Timir ^[1]

Univ. of South Carolina, Columbia, SC (United States)
Benedict College, Columbia, SC (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)

Charge transport in the wide-band-gap $(Al, In) N / GaN$ heterostructures with high carrier density approximately $2 \times 10^{13} {cm}^{- 2}$ is investigated over a large range of temperature ( $270 mK \leq T \leq 280 K$ ) and magnetic field ( $0 \leq B \leq 18 T$ ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov–de Haas (SdH) oscillations a relatively light effective mass of $0.23 m_{e}$ is determined. Furthermore, the linear dependence with temperature ( $T < 20 K$ ) of the inelastic scattering rate ( $τ_{i}^{- 1} \propto T$ ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time $(τ_{q} / τ_{t} < 1)$ is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Furthermore, suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

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Research Organization:: Florida A & M University, Tallahassee, FL (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: NA0002630; DMR-1157490

OSTI ID:: 1540701

Alternate ID(s):: OSTI ID: 1419829

Journal Information:: Physical Review Applied, Vol. 9, Issue 2; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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References (35)

Two-Dimensional Quantum Oscillations of the Conductance at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces Caviglia, A. D.; Gariglio, S.; Cancellieri, C. Physical Review Letters, Vol. 105, Issue 23, Article No. 236802 https://doi.org/10.1103/PhysRevLett.105.236802	journal	December 2010
Weak localization in high-quality two-dimensional systems McPhail, S.; Yasin, C. E.; Hamilton, A. R. Physical Review B, Vol. 70, Issue 24 https://doi.org/10.1103/PhysRevB.70.245311	journal	December 2004
Experimental comparison of the phase-breaking lengths in weak localization and universal conductance fluctuations Hoadley, D.; McConville, Paul; Birge, Norman O. Physical Review B, Vol. 60, Issue 8 https://doi.org/10.1103/PhysRevB.60.5617	journal	August 1999
Current status of AlInN layers lattice-matched to GaN for photonics and electronics Butté, R.; Carlin, J-F; Feltin, E. Journal of Physics D: Applied Physics, Vol. 40, Issue 20 https://doi.org/10.1088/0022-3727/40/20/S16	journal	October 2007
Magnetoconductance and weak localization in silicon inversion layers Wheeler, R. G. Physical Review B, Vol. 24, Issue 8 https://doi.org/10.1103/PhysRevB.24.4645	journal	October 1981
Linear magnetoresistance in three-dimensional carbon nanostructure with periodic spherical voids Wang, Leizhi; Yin, Ming; Abdi, Mohammed Applied Physics Letters, Vol. 107, Issue 2 https://doi.org/10.1063/1.4926606	journal	July 2015
Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys Gorczyca, I.; Suski, T.; Christensen, N. E. Physical Review B, Vol. 93, Issue 16 https://doi.org/10.1103/PhysRevB.93.165302	journal	April 2016
Measurements of the Density-Dependent Many-Body Electron Mass in Two Dimensional $G a A s / A l G a A s$ Heterostructures Tan, Y. -W.; Zhu, J.; Stormer, H. L. Physical Review Letters, Vol. 94, Issue 1 https://doi.org/10.1103/PhysRevLett.94.016405	journal	January 2005
Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures Bayraklı, Aydın; Arslan, Engin; Fırat, Tezer physica status solidi (a), Vol. 209, Issue 6 https://doi.org/10.1002/pssa.201127416	journal	February 2012
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method Lisesivdin, S. B.; Yildiz, A.; Balkan, N. Journal of Applied Physics, Vol. 108, Issue 1 https://doi.org/10.1063/1.3456008	journal	July 2010
Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi₂Te₃ Qu, D.-X.; Hor, Y. S.; Xiong, J. Science, Vol. 329, Issue 5993, p. 821-824 https://doi.org/10.1126/science.1189792	journal	July 2010
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System Hikami, S.; Larkin, A. I.; Nagaoka, Y. Progress of Theoretical Physics, Vol. 63, Issue 2 https://doi.org/10.1143/PTP.63.707	journal	February 1980
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates Frayssinet, E.; Knap, W.; Lorenzini, P. Applied Physics Letters, Vol. 77, Issue 16 https://doi.org/10.1063/1.1318236	journal	October 2000
Weak localization and magnetointersubband scattering effects in an ${Al}_{x} {Ga}_{1 - x} N / G a N$ two-dimensional electron gas Qiu, Z. J.; Gui, Y. S.; Lin, T. Physical Review B, Vol. 69, Issue 12 https://doi.org/10.1103/PhysRevB.69.125335	journal	March 2004
Transport properties of SiO ₂ /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate Lachab, M.; Sultana, M.; Fareed, Q. Journal of Physics D: Applied Physics, Vol. 47, Issue 13 https://doi.org/10.1088/0022-3727/47/13/135108	journal	March 2014
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel Journal of Applied Physics, Vol. 105, Issue 1 https://doi.org/10.1063/1.2996281	journal	January 2009
Strong spin-orbit interactions and weak antilocalization in carbon-doped $p$ -type $Ga As ∕ {Al}_{x} {Ga}_{1 - x} As$ heterostructures Grbić, Boris; Leturcq, Renaud; Ihn, Thomas Physical Review B, Vol. 77, Issue 12 https://doi.org/10.1103/PhysRevB.77.125312	journal	March 2008
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements Qiu, Z. J.; Gui, Y. S.; Lin, T. Solid State Communications, Vol. 131, Issue 1 https://doi.org/10.1016/j.ssc.2004.04.021	journal	July 2004
Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor Henriksen, E. A.; Syed, S.; Ahmadian, Y. Applied Physics Letters, Vol. 86, Issue 25 https://doi.org/10.1063/1.1954893	journal	June 2005
Geometric dependence of transport and universal behavior in three dimensional carbon nanostructures Wang, Leizhi; Yin, Ming; Jaroszynski, Jan Applied Physics Letters, Vol. 109, Issue 12 https://doi.org/10.1063/1.4963261	journal	September 2016
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors Kuzmik, J.; Pozzovivo, G.; Ostermaier, C. Journal of Applied Physics, Vol. 106, Issue 12 https://doi.org/10.1063/1.3272058	journal	December 2009
Weak Localization in Graphene Flakes Tikhonenko, F. V.; Horsell, D. W.; Gorbachev, R. V. Physical Review Letters, Vol. 100, Issue 5 https://doi.org/10.1103/PhysRevLett.100.056802	journal	February 2008
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements Braña, A. F.; Diaz-Paniagua, C.; Batallan, F. Journal of Applied Physics, Vol. 88, Issue 2 https://doi.org/10.1063/1.373758	journal	July 2000
Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures Wu, F.; Gao, K. H.; Li, Z. Q. Journal of Applied Physics, Vol. 117, Issue 15 https://doi.org/10.1063/1.4918536	journal	April 2015
Dephasing time and one-dimensional localization of two-dimensional electrons in $GaAs / {Al}_{x} {Ga}_{1 - x} As$ heterostructures Choi, K. K.; Tsui, D. C.; Alavi, K. Physical Review B, Vol. 36, Issue 14 https://doi.org/10.1103/PhysRevB.36.7751	journal	November 1987
Power electronics on InAlN/(In)GaN: Prospect for a record performance Kuzmik, J. IEEE Electron Device Letters, Vol. 22, Issue 11 https://doi.org/10.1109/55.962646	journal	November 2001
Shubnikov–De Haas Oscillations in ${SrTiO}_{3} / {LaAlO}_{3}$ Interface Ben Shalom, M.; Ron, A.; Palevski, A. Physical Review Letters, Vol. 105, Issue 20, Article No. 206401 https://doi.org/10.1103/PhysRevLett.105.206401	journal	November 2010
Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene Richter, Nils; Hernandez, Yenny R.; Schweitzer, Sebastian Physical Review Applied, Vol. 7, Issue 2 https://doi.org/10.1103/PhysRevApplied.7.024022	journal	February 2017
Magnetotransport properties of lattice-matched In0.18Al0.82N/AlN/GaN heterostructures Miao, Z. L.; Tang, N.; Xu, F. J. Journal of Applied Physics, Vol. 109, Issue 1 https://doi.org/10.1063/1.3525989	journal	January 2011
Small-angle scattering in two-dimensional electron gases Coleridge, P. T. Physical Review B, Vol. 44, Issue 8 https://doi.org/10.1103/PhysRevB.44.3793	journal	August 1991
Unusual semimetallic behavior of carbonized ion-implanted polymers Du, G.; Prigodin, V. N.; Burns, A. Physical Review B, Vol. 58, Issue 8 https://doi.org/10.1103/PhysRevB.58.4485	journal	August 1998
Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped ${Bi}_{2} {Se}_{3}$ : Evidence for Layered Transport of Bulk Carriers Cao, Helin; Tian, Jifa; Miotkowski, Ireneusz Physical Review Letters, Vol. 108, Issue 21 https://doi.org/10.1103/PhysRevLett.108.216803	journal	May 2012
Quantum coherence at low temperatures in mesoscopic systems: Effect of disorder Niimi, Yasuhiro; Baines, Yannick; Capron, Thibaut Physical Review B, Vol. 81, Issue 24 https://doi.org/10.1103/PhysRevB.81.245306	journal	June 2010
Quantum and transport lifetimes in a tunable low-density AlGaN∕GaN two-dimensional electron gas Manfra, M. J.; Simon, S. H.; Baldwin, K. W. Applied Physics Letters, Vol. 85, Issue 22 https://doi.org/10.1063/1.1827939	journal	November 2004
Quantum Coherence at Low Temperatures in Mesoscopic Systems: Effect of Disorder Niimi, Yasuhiro; Baines, Yannick; Capron, Thibaut arXiv https://doi.org/10.48550/arxiv.0911.3201	text	January 2009

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Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure Yang, Liuyun; Wang, Jingyue; Wang, Tao Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5116747	journal	October 2019

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Title: Scatterings and Quantum Effects in ( Al , In ) N / GaN Heterostructures for High-Power and High-Frequency Electronics

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Title: Scatterings and Quantum Effects in $(Al, In) N / GaN$ Heterostructures for High-Power and High-Frequency Electronics