Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

Journal Article · Mon Jan 27 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863409· OSTI ID:22280558

Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen ^[1]; Long, Yun-Ze ^[1]; Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng ^[1]

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1. College of Physics, Qingdao University, Qingdao 266071 (China)

Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

• OSTI ID: 22280558
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CALCINATION
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HETEROJUNCTIONS
MORPHOLOGY
N-TYPE CONDUCTORS
NANOSTRUCTURES
P-TYPE CONDUCTORS
QUARTZ
SUBSTRATES
SURFACES
THIN FILMS
TIN OXIDES
ZINC OXIDES