Rectifying behaviour of spin coated pn hetero-junction

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918136· OSTI ID:22490544

Yogamalar, N. Rajeswari

Rectifying pn hetero- junction is fabricated with an acceptor p-type organic semiconductor namely tetra- chloro dihydroxy tetra-iodo fluorescein (Rose Bengal (RB)) followed by an inorganic n-type ZnO semiconductor on indium tin oxide (ITO) substrate. The n-type ZnO films are formed by unintentional doping and doping with aluminium (Al) and yttrium (Y) donors. The surface morphology and the distribution of grains are observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM). The current-voltage (I-V) characteristic of the rectifying diode is measured to characterize the junction properties. The I-V plots obtained from the hetero- junction with electric contact shows a diode characteristic different from that of an ideal behavior. The overall efficiency of the diode exhibits a greater dependency on the film crystallinity, carrier concentration, and reverse saturation current.

• OSTI ID: 22490544
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ATOMIC FORCE MICROSCOPY
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
FILMS
FLUORESCEIN
HETEROJUNCTIONS
INDIUM
MORPHOLOGY
N-TYPE CONDUCTORS
ORGANIC SEMICONDUCTORS
P-N JUNCTIONS
ROSE BENGAL
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SURFACES
TIN OXIDES
YTTRIUM
ZINC OXIDES