Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}
- Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, Saskatchewan S7N 5E2 (Canada)
- Department of Electrophysics, Institute of Physics and Technology, Ural Federal University, 19 Mira Str., 620002 Yekaterinburg (Russian Federation)
- Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 18 Kovalevskoi Str., 620990 Yekaterinburg (Russian Federation)
- Institute of Electrophysics, Russian Academy of Sciences-Ural Division, 620016 Yekaterinburg (Russian Federation)
- Institute of Physics and Technology, Ural Federal University, 19 Mira Str., 620002 Yekaterinburg (Russian Federation)
Cobalt and manganese ions are implanted into SiO{sub 2} over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO{sub 2} valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO{sub 2} electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.
- OSTI ID:
- 22277871
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion-implanted Si-nanostructures buried in a SiO{sub 2} substrate studied with soft-x-ray spectroscopy
Influence of doping with In, As, Sn, and Ce on the luminescence of Zn{sub 2}SiO{sub 4}-Mn{sup 2+}