Multimodal luminescence spectra of ion-implanted silica
- University of Rostock, Institute of Physics (Germany)
- Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf (Germany)
The main luminescence bands in silica SiO{sub 2} are the red luminescence R (650 nm, 1.9 eV) of the non-bridging oxygen hole center, and the blue band B (460 nm, 2.7 eV) and ultraviolet luminescence UV (290 nm, 4.3 eV), both commonly related to oxygen-deficient centers. In the present work, we will enhance or replace either the first or second constituent of SiO{sub 2}, i.e., silicon or oxygen, isoelectronically by additional implantation of the respective ions. Thus, thermally oxidized SiO{sub 2} layers have been implanted by different ions of the IV group (C, Si, Ge, Sn, Pb) and of the VI group (O, S, Se) with doses up to 5 x 10{sup 16} cm{sup -2}, leading to an atomic dopant fraction of about 4 at % at the half depth of the SiO{sub 2} layers. Very surprisingly, the cathodoluminescence spectra of oxygen-and sulfur-implanted SiO{sub 2} layers show, besides the characteristic bands, a sharp and intensive multimodal structure beginning at the green region at 500 nm up to the near infrared. The energy step differences of the sublevels equal on average 120 meV, and indicate vibration associated electronic states, probably of O{sub 2}{sup -} interstitial molecules.
- OSTI ID:
- 21088080
- Journal Information:
- Semiconductors, Vol. 41, Issue 4; Other Information: DOI: 10.1134/S1063782607040185; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory
Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}