Violet luminescence from Ge{sup +}-implanted SiO{sub 2} film on Si substrate

Book · Mon Dec 01 00:00:00 EST 1997

OSTI ID:549796

Bao, X M; Gao, T; Yan, F; Tong, S ^[1]

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1. Nanjing Univ. (China)

The SiO{sub 2} films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of 1 {times} 10{sup 15} cm{sup {minus}2}, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit intense violet luminescence with a peak at 396 nm. This peak is ascribed to the T{sub 1} {yields} S{sub 0} transition in GeO formed during implantation and annealing. After 1,100 C annealing, Ge clusters were formed in an SiO{sub 2} matrix and a PL peak at 840 nm, due to the quantum confinement effect, which was measured at low temperature (77 K).

• OSTI ID: 549796
• Report Number(s): CONF-961202-; ISBN 1-55899-342-8; TRN: IM9752%%19
• Resource Relation: Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Materials modification and synthesis by ion beam processing; Alexander, D.E. [ed.] [Argonne National Lab., IL (United States)]; Cheung, N.W. [ed.] [Univ. of California, Berkeley, CA (United States)]; Park, B. [ed.] [Georgia Inst. of Tech., Atlanta, GA (United States)]; Skorupa, W. [ed.] [Research Center Rossendorf, Inc., Dresden (Germany)]; PB: 748 p.; Materials Research Society symposium proceedings, Volume 438
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
OPTICAL PROPERTIES
DOPED MATERIALS
ION IMPLANTATION
GERMANIUM IONS
CRYSTAL DOPING
EXPERIMENTAL DATA