Violet luminescence from Ge{sup +}-implanted SiO{sub 2} film on Si substrate
Book
·
OSTI ID:549796
- Nanjing Univ. (China)
The SiO{sub 2} films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of 1 {times} 10{sup 15} cm{sup {minus}2}, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit intense violet luminescence with a peak at 396 nm. This peak is ascribed to the T{sub 1} {yields} S{sub 0} transition in GeO formed during implantation and annealing. After 1,100 C annealing, Ge clusters were formed in an SiO{sub 2} matrix and a PL peak at 840 nm, due to the quantum confinement effect, which was measured at low temperature (77 K).
- OSTI ID:
- 549796
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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