Transport properties in AlInSb/InAsSb heterostructures

Journal Article · Sat Dec 28 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4858399· OSTI ID:22267785

Zhang, Yuwei; Zhang, Yang; Wang, Chengyan; Zeng, Yiping ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1−y}Sb/InAs{sub 1−x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37 000 cm{sup 2}/V s is attainable in 15 nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

• OSTI ID: 22267785
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 24 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
CONCENTRATION RATIO
DIFFUSION BARRIERS
DISLOCATIONS
ELECTRON MOBILITY
INDIUM ANTIMONIDES
INDIUM ARSENIDES
QUANTUM WELLS
VENTILATION BARRIERS