Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Spinodal Decomposition in InSb/AlAs Heterostructures

Journal Article · · Semiconductors
; ;  [1]
  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The In{sub x}Al{sub 1–x}Sb{sub y}As{sub 1–y} alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.
OSTI ID:
22749732
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 52; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

Similar Records

Formation of low-dimensional structures in the InSb/AlAs heterosystem
Journal Article · Fri Sep 15 00:00:00 EDT 2017 · Semiconductors · OSTI ID:22756375

Transport properties in AlInSb/InAsSb heterostructures
Journal Article · Fri Dec 27 23:00:00 EST 2013 · Journal of Applied Physics · OSTI ID:22267785

InAsSb/InAs: A type-I or a type-II band alignment
Journal Article · Sun Oct 15 00:00:00 EDT 1995 · Physical Review, B: Condensed Matter · OSTI ID:124754