Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation
Journal Article
·
· Journal of Applied Physics
- Integrated Systems Laboratory, ETH Zürich, Gloriastr. 35, 8092 Zürich (Switzerland)
We propose to check and validate the approximations made in dissipative quantum transport (QT) simulations solved in the Non-equilibrium Green's Function formalism by comparing them with the exact solution of the linearized Boltzmann Transport Equation (LB) in the stationary regime. For that purpose, we calculate the phonon-limited electron and hole mobility in bulk Si and ultra-scaled Si nanowires for different crystal orientations 〈100〉, 〈110〉, and 〈111〉. In both QT and LB simulations, we use the same sp{sup 3}d{sup 5}s{sup *} tight-binding model to describe the electron/hole properties and the same valence-force-field approach to account for the phonon properties. It is found that the QT simplifications work well for electrons, but are less accurate for holes, where a renormalization of the phonon scattering strength is proved useful to improve the results.
- OSTI ID:
- 22266159
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Tue Nov 30 23:00:00 EST 2010
· 2010 International Electron Devices Meeting; 6-8 Dec. 2010; San Francisco, CA, USA
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OSTI ID:1567581