Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

Conference · Wed Dec 01 04:00:00 EST 2010 · 2010 International Electron Devices Meeting; 6-8 Dec. 2010; San Francisco, CA, USA

DOI:https://doi.org/10.1109/IEDM.2010.5703324· OSTI ID:1567581

Luisier, Mathieu; Klimeck, Gerhard

In this paper, ultrascaled n- and p-channel Si nanowire field-effect transistors (NW FETs) with [100], [110], and [111] as channel orientations are simulated in the presence of electron-phonon scattering using a sp 3 d 5 s* tight-binding approach and confined phonon dispersions. The low field mobility, the injection velocity, and the ballisticity of these devices are extracted and compared to n-type InAs and p-type Ge NW FETs. It is found that a [110] Si channel represents the best compromise between high n- and p-type performances in the considered NW FETs.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)
• Sponsoring Organization: USDOE Office of Science; USDOE
• OSTI ID: 1567581
• Conference Information: Journal Name: 2010 International Electron Devices Meeting; 6-8 Dec. 2010; San Francisco, CA, USA
• Country of Publication: United States
• Language: English