Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors

Luisier, Mathieu

doi:10.1063/1.3540689

Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors

Journal Article · Fri Jan 21 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3540689· OSTI ID:1564763

Luisier, Mathieu ^[1]

Purdue Univ., West Lafayette, IN (United States)

In this work, ultrascaled n- and p-type Si nanowire field-effect transistors (NW FETs) with [100], [110], and [111] as channel orientations are simulated in the presence of electron-phonon scattering using an atomistic quantum transport solver based on the sp³d⁵s* tight-binding model for electrons and holes, a modified Keating model for phonons, and the nonequilibrium Green’s function formalism. The channel resistances of devices with different gate lengths and carrier concentrations are computed at room temperature and used to extract phonon-limited, ballistic, and effective low-field mobilities. It is discovered that a [110] channel represents the best choice for high n- and p-type NW FET performances.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1564763

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 98; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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