Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Luisier, Mathieu; Klimeck, Gerhard

doi:10.1103/physrevb.80.155430

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Journal Article · Thu Oct 01 04:00:00 EDT 2009 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/physrevb.80.155430· OSTI ID:1564709

Luisier, Mathieu; Klimeck, Gerhard

An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si nanowire field-effect transistors in the presence of electron-phonon scattering. The nonequilibrium Green’s function (NEGF) formalism is solved in a nearest-neighbor sp³d⁵s^* tight-binding basis. The scattering self-energies are derived in the self-consistent Born approximation to inelastically couple the full electron and phonon energy spectra. The band dispersion and the eigenmodes of the confined phonons are calculated using a dynamical matrix that includes the bond and the angle deformations of the nanowires. The optimization of the numerical algorithms and the parallelization of the NEGF scheme enable the investigation of nanowire structures with diameters up to 3 nm and lengths over 40 nm. It is found that the reduction in the device drain current, caused by electron-phonon scattering, is more important in the ON state than in the OFF state of the transistor. Ballistic transport simulations considerably overestimate the device ON currents by artificially increasing the charge injection mechanism at the source contact.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF), Oak Ridge, TN (United States); UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 1564709

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 15 Vol. 80; ISSN 1098-0121; ISSN PRBMDO

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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