Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals
Journal Article
·
· AIP Conference Proceedings
- College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan)
- Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)
The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ∼10{sup 3} Ωcm for un-implanted samples to ∼10{sup −2} Ωcm for as-implanted ones are observed. The resistivity is further decreased to ∼10{sup −3} Ωcm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.
- OSTI ID:
- 22261964
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1566; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Origins of low resistivity in Al ion-implanted ZnO bulk single crystals
Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity
Photoluminescence of He-implanted ZnO
Journal Article
·
Wed Jun 15 00:00:00 EDT 2011
· Journal of Applied Physics
·
OSTI ID:21538445
Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity
Journal Article
·
Thu Dec 22 23:00:00 EST 2011
· AIP Conference Proceedings
·
OSTI ID:21612433
Photoluminescence of He-implanted ZnO
Conference
·
Wed Dec 31 23:00:00 EST 2003
·
OSTI ID:977830