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Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666261· OSTI ID:21612433
; ; ;  [1];  [2];  [3]
  1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan)
  2. Department of Arts and Sciences, Osaka Kyoiku University, Kashiwara, Osaka 582-8582 (Japan)
  3. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)
Nuclear reaction analysis (NRA) of carbon-implanted ZnO bulk single crystals (carbon concentration: 1.5x10{sup 20} cm{sup -3}), in conjunction with the channeling technique, using the {sup 12}C(d,p){sup 13}C and {sup 16}O(d,p){sup 17}O reactions shows the presence of the interstitial carbon (C{sub i}) and the occupancy of substitute sites of oxygen atoms. These results suggest that the variation in resistivity from the order of 10{sup 4} {Omega}cm(for un-implanted samples) to that of 10 {Omega}cm (for as-implanted ones) is attributed to the C{sub i} and/or its complex defects, which would act as a shallow donor in ZnO.
OSTI ID:
21612433
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English