GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

Journal Article · Tue Dec 03 23:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848482· OSTI ID:22261898

Prongjit, Patchareewan; Pankaow, Naraporn; Boonpeng, Poonyasiri; Thainoi, Supachok; Panyakeow, Somsak; Ratanathammaphan, Somchai ^[1]

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1. Semiconductor Device Research Laboratory (Nanotec Center of Excellence) Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330 (Thailand)

We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

• OSTI ID: 22261898
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1566; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SOLIDS
SUBSTRATES