InGaAs/GaAs multiple strained-layer structure grown on a lattice-matched InGaAs substrate wafer
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
- Crystallod, Inc., Martinsville, New Jersey 08836 (United States)
Growth of In{sub 0.15}Ga{sub 0.85}As/GaAs multilayers are reported on lattice matched In{sub 0.04}Ga{sub 0.96}As buffer layers using two different starting substrates: (1) a bulk, lattice-matched, Czochralski-grown In{sub 0.04}Ga{sub 0.96}As wafer, and (2) a bulk (unmatched) GaAs wafer. The structures, grown by molecular-beam epitaxy, consist of a 200-nm-thick undoped buffer plus a 28-1/2 period modulation-doped multilayer having 10-nm-thick In{sub 0.15}Ga{sub 0.85}As quantum wells and 25-nm-thick GaAs barriers doped over their 10-nm central region. The 4 K Hall mobility of the multilayer grown on the InGaAs substrate is 57% larger than the structure grown on GaAs, despite a low dislocation density observed in transmission electron micrographs of the latter. These results suggest that bulk ternary substrates can provide enhanced performance for future electronic and optoelectronic devices.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 29243
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 66; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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