Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

Journal Article · Wed Dec 04 04:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848382· OSTI ID:22261808

Goswami, Srijit; Ghosh, Arindam ^[1]; Baenninger, Matthias; Farrer, Ian; Ritchie, David A. ^[2]; Tripathi, Vikram ^[3]; Pepper, Michael ^[4]

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1. Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)
2. Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
3. Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)
4. Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

• OSTI ID: 22261808
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1566; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
MAGNETIC FIELDS
MAGNETIC MATERIALS
MAGNETORESISTANCE
TEMPERATURE RANGE