Influence of Microwave Excitation‐Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra‐High Mobility GaAs/AlGaAs 2DES

Samaraweera, Rasanga L.; Gunawardana, Binuka; Kriisa, Annika; Nanayakkara, Tharanga; Munasinghe, Rasadi; Reichl, Christian; Wegscheider, Werner; Mani, Ramesh G.

doi:10.1002/pssb.201800610

Influence of Microwave Excitation‐Power on the Narrow Negative Magnetoresistance Effect Around B = 0 T in the Ultra‐High Mobility GaAs/AlGaAs 2DES

Journal Article · Mon Feb 25 00:00:00 EST 2019 · Physica Status Solidi B. Basic Solid State Physics

DOI:https://doi.org/10.1002/pssb.201800610· OSTI ID:1496649

^[1]; Gunawardana, Binuka ^[1]; Kriisa, Annika ^[1]; Nanayakkara, Tharanga ^[1]; Munasinghe, Rasadi ^[1]; Reichl, Christian ^[2]; Wegscheider, Werner ^[2]; Mani, Ramesh G. ^[1]

Department of Physics and Astronomy Georgia State University Atlanta 30303 Georgia
Laboratorium für Festkörperphysik ETH‐Zurich 8093 Zurich Switzerland

In addition to the photo‐excited zero‐resistance states and radiation‐induced magnetoresistance oscillations, which can be observed in the high‐quality GaAs/AlGaAs two‐dimensional electron system (2DES), magnetotransport studies of this 2DES also exhibit interesting dark magnetoresistance effects. Here, a narrow negative magnetoresistance (MR) effect that appears around zero field, and spans over about −0.02 T ≤ B ≤ 0.02 T is examined. This experimental work aims to study the influence of microwave (MW) photo‐excitation on this narrow negative‐MR effect in high‐mobility GaAs/AlGaAs 2DES. Experimental data exhibit that the observed negative magnetoresistance effect disappears with increasing MW power. For example, the change in magnetoresistance ( ΔR _xx ) due to the narrow negative‐MR effect drops by ≈50% upon increasing the source power up to about 8 mW. Further analysis shows that the zero‐field resistance monotonically increases with increasing the power, suggesting that electron heating due to the energy absorbed from the radiation field accounts for the observed quenching of the narrow negative‐MR effect.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0001762

OSTI ID:: 1496649

Journal Information:: Physica Status Solidi B. Basic Solid State Physics, Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Issue: 6 Vol. 256; ISSN 0370-1972

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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