Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

Mani, R. G.; Kriisa, A.; Wegscheider, W.

doi:10.1038/srep02747

Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

Journal Article · Wed Sep 25 00:00:00 EDT 2013 · Scientific Reports

DOI:https://doi.org/10.1038/srep02747· OSTI ID:1624653

Mani, R. G. ^[1]; Kriisa, A. ^[2]; Wegscheider, W. ^[3]

Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy; DOE/OSTI
Emory Univ., Atlanta, GA (United States). Dept. of Physics
Eidgenoessische Technische Hochschule, Zurich (Switzerland). Lab. for Feskorperphysik

Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a ‘‘bell-shape’’ negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed ‘‘non-ohmic’’ size-dependent negative GMR.

View Accepted Manuscript (DOE)

Research Organization:: Georgia State Univ., Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0001762

OSTI ID:: 1624653

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 3; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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