Effect of the mobility on (I-V) characteristics of the MOSFET
Journal Article
·
· AIP Conference Proceedings
- Technology Department, Faculty of Technology, 20 August 1955 University, BP 26, El-Hadaiek Street 21000 Skikda, Algeria and Department of Physics, Faculty of Science, Thin Films and Interfaces Laboratory, P. B 325, Ain El Bey Street, Mentouri Univers (Algeria)
- Department of Material Sciences, Larbi Ben M'hidi University, BP 358, Constantine Street, 04000 Oum El-Bouaghi, Algeria and Department of Physics, Faculty of Science, Thin Films and Interfaces Laboratory, P. B 325, Ain El Bey Street, Mentouri Univers (Algeria)
MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.
- OSTI ID:
- 22261679
- Journal Information:
- AIP Conference Proceedings, Vol. 1569, Issue 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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