Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors
- University of Florida
- University of Florida, Gainesville
- Korea University
- Kopin Corporation, Taunton, MA
- ORNL
The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480]
- Research Organization:
- Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1025867
- Journal Information:
- Journal of Vacuum Science & Technology B, Journal Name: Journal of Vacuum Science & Technology B Journal Issue: 6 Vol. 29; ISSN 1071-1023
- Country of Publication:
- United States
- Language:
- English
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