The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

Conference · Sat Dec 31 23:00:00 EST 2011

OSTI ID:1052250

Liu, L. ^[1]; Lo, C. F. ^[2]; Xi, Y. Y. ^[1]; Wang, Y. l. ^[2]; Kim, H. -Y. ^[3]; Kim, J. ^[3]; Pearton, S. J. ^[2]; Laboutin, O. ^[4]; Cao, Yu ^[4]; Johnson, Wayne J. ^[4]; Kravchenko, Ivan I ^[5]; Ren, F. ^[2]

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1. University of Florida, Gainesville
2. University of Florida
3. Korea University
4. Kopin Corporation, Taunton, MA
5. ORNL

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 1015 cm-2, or to a different doses of 2 1011, 5 1013 or 2 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1052250
• Country of Publication: United States
• Language: English