Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

Journal Article · Mon Mar 24 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869576· OSTI ID:22258587

Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki ^[1]

---

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as {sup 4}A{sub 2}({sup 4}F) → {sup 4}T{sub 1}({sup 4}G) and {sup 4}T{sub 1}({sup 4}G) → {sup 6}A{sub 1}({sup 6}S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.

• OSTI ID: 22258587
• Journal Information: Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
LIGHT EMITTING DIODES
TEMPERATURE DEPENDENCE
ZINC SULFIDES