skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultraviolet-light-emitting AlN:Gd thin-film electroluminescence device using an energy transfer from Gd{sup 3+} ions to N{sub 2} molecules

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3116222· OSTI ID:21356122
; ; ; ; ;  [1]
  1. Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

An ultraviolet (UV)-light-emitting AlN:Gd thin-film electroluminescence device (TFELD) was demonstrated for application to flat-panel lighting. AlN:Gd thin films were deposited by rf magnetron sputtering at 200 deg. C and applied to an ac-voltage-driven TFELD with a double-insulating structure as an emission layer. UV-light emission was observed over a threshold voltage of 270 V for a 5 kHz sinusoidal ac voltage. Electroluminescence (EL) spectra were compared with photoluminescence and cathodoluminescence spectra of AlN:Gd originating from Gd{sup 3+} {sup 6}P{sub j}->{sup 8}S{sub 7/2} transitions and with an emission spectrum of the second positive system (C{sup 3}PI{sub u}->B{sup 3}PI{sub g}) of N{sub 2} molecules. As a result, an energy transfer from Gd{sup 3+} {sup 6}P{sub j}->{sup 8}S{sub 7/2} to N{sub 2}C{sup 3}PI{sub u}->B{sup 3}PI{sub g} is discussed as a likely mechanism for the UV EL. Finally, a preliminary result, associated with the conversion from UV light into blue-green light via a phosphor, is demonstrated for the color tunability of the TFELD.

OSTI ID:
21356122
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 8; Other Information: DOI: 10.1063/1.3116222; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English