High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

Journal Article · Sun Sep 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4895700· OSTI ID:22306002

Hai, Pham Nam ^[1]; Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki ^[1]

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1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

• OSTI ID: 22306002
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
ELECTRON TEMPERATURE
EV RANGE
GALLIUM ARSENIDES
HOLES
LAYERS
MANGANESE ADDITIONS
POWER DENSITY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPECTRA
TEMPERATURE RANGE 0273-0400 K
TUNNEL DIODES
TUNNEL EFFECT
VISIBLE RADIATION