Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

Journal Article · Mon Mar 10 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867082· OSTI ID:22257066

Tan, K. H.; Loke, W. K.; Wicaksono, S.; Li, D.; Leong, Y. R.; Yoon, S. F. ^[1]; Sharma, P.; Milakovich, T.; Bulsara, M. T.; Fitzgerald, E. A. ^[2]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
2. Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN{sub 0.018}As{sub 0.897}Sb{sub 0.085} photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700 °C for 5 min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (V{sub OC}) of 0.42 V and a short circuit current density (J{sub SC}) of 23.4 mA/cm{sup 2} while the device on the Si substrate showed a V{sub OC} of 0.39 V and a J{sub SC} of 21.3 mA/cm{sup 2}. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.

• OSTI ID: 22257066
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
GALLIUM NITRIDES
GERMANIUM SILICIDES
MOLECULAR BEAM EPITAXY
PHOTOVOLTAIC CELLS
QUANTUM EFFICIENCY
SILICON
SUBSTRATES