Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
- Jeonju Center, Korea Basic Science Institute, Jeonju 561-756 (Korea, Republic of)
We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer characteristics from the P3HT to the ZnO NWs. Under irradiation by laser light with a wavelength of 532 nm, photo-induced electrons were created in the P3HT and then transported to the ZnO NWs, constituting a source-drain current in the initially enhancement-mode P3HT-coated ZnO-NW FETs. As the intensity of the light increased, the current increased, and its threshold voltage shifted to the negative gate-bias direction. We estimated the photo-induced electron density and the electron-transfer characteristics, which will be helpful for understanding organic-inorganic hybrid optoelectronic devices.
- OSTI ID:
- 22253963
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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