Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
- Jeonju Center, Korea Basic Science Institute, Jeonju 561-756 (Korea, Republic of)
We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer characteristics from the P3HT to the ZnO NWs. Under irradiation by laser light with a wavelength of 532 nm, photo-induced electrons were created in the P3HT and then transported to the ZnO NWs, constituting a source-drain current in the initially enhancement-mode P3HT-coated ZnO-NW FETs. As the intensity of the light increased, the current increased, and its threshold voltage shifted to the negative gate-bias direction. We estimated the photo-induced electron density and the electron-transfer characteristics, which will be helpful for understanding organic-inorganic hybrid optoelectronic devices.
- OSTI ID:
- 22253963
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 103; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate
High-performance ZnO nanowire field-effect transistor with forming gas treated SiO{sub 2} gate dielectrics
Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics
Journal Article
·
Sun Jan 19 23:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22280625
High-performance ZnO nanowire field-effect transistor with forming gas treated SiO{sub 2} gate dielectrics
Journal Article
·
Tue Apr 28 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22402935
Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics
Journal Article
·
Mon Aug 14 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:20883168