Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer
- Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge, Tennessee 37831 (United States)
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.
- OSTI ID:
- 22253813
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 103; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate
Advanced passivation techniques for Si solar cells with high-κ dielectric materials