In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate

Journal Article · Mon Feb 15 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3327834· OSTI ID:21347277

Chen, Q; Huang, H; Chen, W; Wee, A T. S.; Feng, Y P ^[1]; Chai, J W; Zhang, Z; Pan, J S; Wang, S J ^[2]

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1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)
2. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

High quality HfO{sub 2} dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO{sub 2}/graphene/4H-SiC heterojunctions have good thermal stability up to 650 deg. C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO{sub 2} and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.

• OSTI ID: 21347277
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DEPOSITION
DIELECTRIC MATERIALS
ELECTRON SPECTROSCOPY
ELECTRONIC EQUIPMENT
EMISSION
EPITAXY
EQUIPMENT
FILMS
HAFNIUM COMPOUNDS
HAFNIUM OXIDES
HEAT TREATMENTS
HETEROJUNCTIONS
LAYERS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
PLASMA
REFRACTORY METAL COMPOUNDS
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON COMPOUNDS
SPECTRAL SHIFT
SPECTROSCOPY
SPUTTERING
SUBSTRATES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY PHOTOELECTRON SPECTROSCOPY