High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
- Saint Petersburg State University (Russian Federation)
- ITMO University (Russian Federation)
- Ioffe Institute (Russian Federation)
- Technische Universität Ilmenau (Germany)
The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 10{sup 11}–1 × 10{sup 12} cm{sup –2}, and the maximum mobility of electrons at room temperature approached 6000 cm{sup 2}/(V s).
- OSTI ID:
- 22945144
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 14 Vol. 52; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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