Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)
- Saint Petersburg State University (Russian Federation)
- Russian Academy of Sciences, Ioffe Institute (Russian Federation)
The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.
- OSTI ID:
- 22756417
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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